dc.creatorAraya, M.
dc.creatorDiaz-Droguett, D. E.
dc.creatorRibeiro, M.
dc.creatorAlbertin, K. F.
dc.creatorAvila, J.
dc.creatorFuenzalida, V. M.
dc.creatorEspinoza, R.
dc.creatorCriado, D.
dc.date.accessioned2013-11-01T10:12:09Z
dc.date.accessioned2018-07-04T16:09:54Z
dc.date.available2013-11-01T10:12:09Z
dc.date.available2018-07-04T16:09:54Z
dc.date.created2013-11-01T10:12:09Z
dc.date.issued2013-08-02
dc.identifierJOURNAL OF NON-CRYSTALLINE SOLIDS, AMSTERDAM, v. 358, n. 5, supl. 1, Part 3, pp. 880-884, 36951, 2012
dc.identifier0022-3093
dc.identifierhttp://www.producao.usp.br/handle/BDPI/37198
dc.identifier10.1016/j.jnoncrysol.2011.12.072
dc.identifierhttp://dx.doi.org/10.1016/j.jnoncrysol.2011.12.072
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1632272
dc.description.abstractIn this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si-K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherELSEVIER SCIENCE BV
dc.publisherAMSTERDAM
dc.relationJOURNAL OF NON-CRYSTALLINE SOLIDS
dc.rightsCopyright ELSEVIER SCIENCE BV
dc.rightsclosedAccess
dc.subjectELECTRON BEAM
dc.subjectSILICON OXIDE
dc.subjectPHOTOLUMINESCENCE
dc.titlePhotoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique
dc.typeArtículos de revistas


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