dc.creator | Araya, M. | |
dc.creator | Diaz-Droguett, D. E. | |
dc.creator | Ribeiro, M. | |
dc.creator | Albertin, K. F. | |
dc.creator | Avila, J. | |
dc.creator | Fuenzalida, V. M. | |
dc.creator | Espinoza, R. | |
dc.creator | Criado, D. | |
dc.date.accessioned | 2013-11-01T10:12:09Z | |
dc.date.accessioned | 2018-07-04T16:09:54Z | |
dc.date.available | 2013-11-01T10:12:09Z | |
dc.date.available | 2018-07-04T16:09:54Z | |
dc.date.created | 2013-11-01T10:12:09Z | |
dc.date.issued | 2013-08-02 | |
dc.identifier | JOURNAL OF NON-CRYSTALLINE SOLIDS, AMSTERDAM, v. 358, n. 5, supl. 1, Part 3, pp. 880-884, 36951, 2012 | |
dc.identifier | 0022-3093 | |
dc.identifier | http://www.producao.usp.br/handle/BDPI/37198 | |
dc.identifier | 10.1016/j.jnoncrysol.2011.12.072 | |
dc.identifier | http://dx.doi.org/10.1016/j.jnoncrysol.2011.12.072 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1632272 | |
dc.description.abstract | In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si-K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved. | |
dc.language | eng | |
dc.publisher | ELSEVIER SCIENCE BV | |
dc.publisher | AMSTERDAM | |
dc.relation | JOURNAL OF NON-CRYSTALLINE SOLIDS | |
dc.rights | Copyright ELSEVIER SCIENCE BV | |
dc.rights | closedAccess | |
dc.subject | ELECTRON BEAM | |
dc.subject | SILICON OXIDE | |
dc.subject | PHOTOLUMINESCENCE | |
dc.title | Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique | |
dc.type | Artículos de revistas | |