Artículos de revistas
Performance of electronic devices submitted to X-rays and high energy proton beams
Fecha
2013-08-02Registro en:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, AMSTERDAM, v. 273, n. 11, supl. 1, Part 2, pp. 135-138, FEB 15, 2012
0168-583X
10.1016/j.nimb.2011.07.058
Autor
Silveira, M. A. G.
Cirne, K. H.
Santos, R. B. B.
Gimenez, S. P.
Medina, Nilberto Heder
Added, Nemitala
Tabacniks, Manfredo Harri
Barbosa, Marcel Dupret Lopes
Seixas, L. E.
Melo, W.
de Lima, J. A.
Institución
Resumen
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 key X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. (C) 2011 Elsevier B.V. All rights reserved.