Artículos de revistas
Electrodeposition and characterization of undoped and nitrogen-doped ZnSe films
Fecha
2010Registro en:
MATERIALS CHEMISTRY AND PHYSICS, v.121, n.1/Fev, p.58-62, 2010
0254-0584
10.1016/j.matchemphys.2009.12.038
Autor
MANZOLI, A.
EGUILUZ, K. I. B.
SALAZAR-BANDA, G. R.
MACHADO, S. A. S.
Institución
Resumen
Semiconducting films of (n-type) ZnSe and (p-type) nitrogen-doped ZnSe were electrodeposited by a linear-sweep voltammetric technique on to a substrate of fluorine-tin oxide (FM) glass ceramics. The films were characterized by scanning electron microscopy, energy-dispersive X-ray analysis and grazing-incidence X-ray diffraction. The results indicated that the material was deposited uniformly over the substrate, forming clusters when the Zn content of the bath was 0.1 mol L(-1) and a film when it was 0.2 or 0.3 mol L(-1). The effectiveness of doping the films with nitrogen by adding ammonium sulfate to the deposition solution was assessed by measuring the film-electrolyte interface capacitance (C) at various applied potentials (E(ap)) and plotting Mott-Schottky curves (C(-2) vs E(ap)), whose slope sign was used to identify p-type ZnSe. (C) 2009 Elsevier B.V. All rights reserved.