dc.creatorScopel, Wanderla L
dc.creatorFazzio, Adalberto
dc.creatorSilva, Antonio Jose Roque da
dc.date.accessioned2012-10-20T04:10:41Z
dc.date.accessioned2018-07-04T15:40:50Z
dc.date.available2012-10-20T04:10:41Z
dc.date.available2018-07-04T15:40:50Z
dc.date.created2012-10-20T04:10:41Z
dc.date.issued2009
dc.identifierJOURNAL OF PHYSICS-CONDENSED MATTER, v.21, n.1, 2009
dc.identifier0953-8984
dc.identifierhttp://producao.usp.br/handle/BDPI/29413
dc.identifier10.1088/0953-8984/21/1/012206
dc.identifierhttp://dx.doi.org/10.1088/0953-8984/21/1/012206
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1626053
dc.description.abstractThe introduction of high-permittivity gate dielectric materials into complementary metal oxide semiconductor technology has reopened the interest in Ge as a channel material mainly due to its high hole mobility. Since HfO(2) and ZrO(2) are two of the most promising dielectric candidates, it is important to investigate if Hf and Zr may diffuse into the Ge channel. Therefore, using ab initio density functional theory calculations, we have studied substitutional and interstitial Hf and Zr impurities in c-Ge, looking for neutral defects. We find that (i) substitutional Zr and Hf defects are energetically more favorable than interstitial defects; (ii) under oxygen-rich conditions, neither Zr nor Hf migration towards the channel is likely to occur; (iii) either under Hf- or Zr-rich conditions it is very likely, particularly for Zr, that defects will be incorporated in the channel.
dc.languageeng
dc.publisherIOP PUBLISHING LTD
dc.relationJournal of Physics-condensed Matter
dc.rightsCopyright IOP PUBLISHING LTD
dc.rightsrestrictedAccess
dc.titleTheoretical investigation of Hf and Zr defects in c-Ge
dc.typeArtículos de revistas


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