Artículos de revistas
Reentrant quantum Hall effect in bilayer system at high filling factors
Fecha
2008Registro en:
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.40, n.5, p.1576-1578, 2008
1386-9477
10.1016/j.physe.2007.09.207
Autor
Gusev, Gennady
BAKAROV, A. K.
Lamas, Tomás Erikson
PORTAL, J. C.
Institución
Resumen
We report on the measurements of the quantum Hall effect states in double quantum well structures at the filling factors v = 4N + 1 and 4N + 3, where N is the Landau index number, in the presence of the in-plane magnetic field. The quantum Hall states at these filling factors vanish and reappear several times. Repeated reentrance of the transport gap occurs due to the periodic vanishing of the tunneling amplitude in the presence of the in-plane field. When the gap vanishes, the transport becomes anisotropic. The anisotropy persist at half-odd filling factors, when bilayer quantum Hall states are recovered with increase of the tilt angle. (C) 2007 Elsevier B.V. All rights reserved.