Artículos de revistas
Electrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films
Fecha
2009Registro en:
SILICON CARBIDE AND RELATED MATERIALS 2008, v.615-617, p.327-330, 2009
0255-5476
Autor
FRAGA, M. A.
MASSI, M.
OLIVEIRA, I. C.
CRUZ, N. C.
Santos Filho, Sebastiao Gomes dos
Institución
Resumen
Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.