Structural and optical analysis of GaAsP/GaP core-shell nanowires

dc.creatorMOHSENI, P. K.
dc.creatorRODRIGUES, A. D.
dc.creatorGALZERANI, J. C.
dc.creatorPusep, Yuri A.
dc.creatorLAPIERRE, R. R.
dc.date.accessioned2012-04-19T15:34:53Z
dc.date.accessioned2018-07-04T14:42:13Z
dc.date.available2012-04-19T15:34:53Z
dc.date.available2018-07-04T14:42:13Z
dc.date.created2012-04-19T15:34:53Z
dc.date.issued2009
dc.identifierJOURNAL OF APPLIED PHYSICS, v.106, n.12, 2009
dc.identifier0021-8979
dc.identifierhttp://producao.usp.br/handle/BDPI/16454
dc.identifier10.1063/1.3269724
dc.identifierhttp://dx.doi.org/10.1063/1.3269724
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1613276
dc.description.abstractThe structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence (PL), and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers.
dc.languageeng
dc.publisherAMER INST PHYSICS
dc.relationJournal of Applied Physics
dc.rightsCopyright AMER INST PHYSICS
dc.rightsopenAccess
dc.subjectgallium arsenide
dc.subjectgallium compounds
dc.subjectIII-V semiconductors
dc.subjectmagneto-optical effects
dc.subjectmolecular beam epitaxial growth
dc.subjectnanowires
dc.subjectpassivation
dc.subjectphotoluminescence
dc.subjectRaman spectra
dc.subjectred shift
dc.subjectsemiconductor quantum wires
dc.subjecttransmission electron microscopy
dc.titleStructural and optical analysis of GaAsP/GaP core-shell nanowires
dc.typeArtículos de revistas


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