Artículos de revistas
Semiconducting Sn(3)O(4) nanobelts: Growth and electronic structure
Fecha
2010Registro en:
JOURNAL OF APPLIED PHYSICS, v.107, n.3, 2010
0021-8979
10.1063/1.3294613
Autor
BERENGUE, O. M.
SIMON, R. A.
CHIQUITO, A. J.
DALMASCHIO, C. J.
LEITE, E. R.
GUERREIRO, H. A.
GUIMARAES, Francisco Eduardo Gontijo
Institución
Resumen
The study of structures based on nonstoichiometric SnO(2-x) compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report on single crystal Sn(3)O(4) nanobelts, which were successfully grown by a carbothermal evaporation process of SnO(2) powder in association with the well known vapor-solid mechanism. By combining the structural data and transport properties, the samples were investigated. The results showed a triclinic semiconductor structure with a fundamental gap of 2.9 eV. The semiconductor behavior was confirmed by the electron transport data, which pointed to the variable range hopping process as the main conduction mechanism, thus giving consistent support to the mechanisms underlying the observed semiconducting character.