Fabrication And Optical Properties Of Strain-free Self-assembled Mesoscopic Gaas Structures

dc.creatorCovre da Silva
dc.creatorSaimon Filipe; Mardegan
dc.creatorThayna; de Araujo
dc.creatorSidnei Ramis; Ospina Ramirez
dc.creatorCarlos Alberto; Kiravittaya
dc.creatorSuwit; Couto
dc.creatorOdilon D. D.
dc.creatorJr.; Iikawa
dc.creatorFernando; Deneke
dc.creatorChristoph
dc.date2017
dc.datejan
dc.date2017-11-13T13:22:43Z
dc.date2017-11-13T13:22:43Z
dc.date.accessioned2018-03-29T05:55:30Z
dc.date.available2018-03-29T05:55:30Z
dc.identifierNanoscale Research Letters. Springer, v. 12, p. , 2017.
dc.identifier1556-276X
dc.identifierWOS:000397571900001
dc.identifier10.1186/s11671-016-1782-1
dc.identifierhttps://nanoscalereslett.springeropen.com/articles/10.1186/s11671-016-1782-1
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/327957
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1364982
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionWe use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 mu m and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.
dc.description12
dc.descriptionSisNano (MCTI Brazil)
dc.descriptionFAPESP [2012/11382-9, 2014/17141-9, 2015/08344-6, 2016/14001-7]
dc.descriptionCNPq [482729/2013-9, 305769/2015-4, 475343/2013-1]
dc.descriptionCAPES
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.languageEnglish
dc.publisherSpringer
dc.publisherNew York
dc.relationNanoscale Research Letters
dc.rightsaberto
dc.sourceWOS
dc.subjectStrain-free Quantum Dots
dc.subjectLocal Hole Etching
dc.subjectGa-assisted Deoxidation
dc.subjectMolecular Beam Epitaxy
dc.titleFabrication And Optical Properties Of Strain-free Self-assembled Mesoscopic Gaas Structures
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución