Optical Phonon Modulation In Semiconductors By Surface Acoustic Waves

dc.creatorIikawa
dc.creatorF; Hernandez-Minguez
dc.creatorA; Ramsteiner
dc.creatorM; Santos
dc.creatorPV
dc.date2016
dc.date2016-12-06T18:32:37Z
dc.date2016-12-06T18:32:37Z
dc.date.accessioned2018-03-29T02:05:15Z
dc.date.available2018-03-29T02:05:15Z
dc.identifier2469-9969
dc.identifierPhysical Review B. AMER PHYSICAL SOC, n. 93, n. 19, p. .
dc.identifier2469-9950
dc.identifierWOS:000376920400010
dc.identifier10.1103/PhysRevB.93.195212
dc.identifierhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.195212
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/320591
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1311357
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionWe investigate the modulation of optical phonons in semiconductor crystals by a surface acoustic wave (SAW) propagating on the crystal surface. The SAW fields induce changes on the order of 10(-3) in the time-averaged Raman peak intensity by optical phonons in Si and GaN crystals. The SAW-induced modifications in the intensity of the Raman lines are dominated by the modulation of the longitudinal optical (LO) phonon energy by the SAW strain field. We show that while the strain field of the excited Rayleigh SAWs changes the LO phonon energy, it does not mix it with the transversal optical modes. In addition to the previous contribution, which is of a local character, the experiments give evidence for a weaker and nonlocal contribution attributed to the spatial variation of the SAW strain field. The latter activates optical modes with large wave vectors and, therefore, lower energies. The experimental results, which are well described by theoretical models for the two contributions, prove that optical phonons can be manipulated by SAWs with mu m wavelengths.
dc.description93
dc.description
dc.description
dc.description
dc.descriptionAlexander von Humboldt-Stiftung (Germany)
dc.descriptionFundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP, Brazil)
dc.descriptionConselho Nacional de Desenvolvimento Cientifico e Tecnologico (CnPq, Brazil)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description
dc.description
dc.description
dc.languageEnglish
dc.publisherAMER PHYSICAL SOC
dc.publisherCOLLEGE PK
dc.relationPhysical Review B
dc.rightsfechado
dc.sourceWOS
dc.subjectRaman-scattering
dc.subjectGaas
dc.subjectGan
dc.subjectSuperlattices
dc.subjectConfinement
dc.subjectDispersion
dc.subjectDiamond
dc.subjectSilicon
dc.subjectAln
dc.titleOptical Phonon Modulation In Semiconductors By Surface Acoustic Waves
dc.typeArtículos de revistas


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