Probing Individual Quantum Dots: Noise in Self-Assembled Systems

dc.creatorVICARO, K. O.
dc.creatorGUTIERREZ, H. R.
dc.creatorSEABRA, A. C.
dc.creatorSCHULZ, P. A.
dc.creatorCOTTA, M. A.
dc.date2009
dc.date2013-07-26T17:57:45Z
dc.date2016-07-01T14:12:29Z
dc.date2013-07-26T17:57:45Z
dc.date2016-07-01T14:12:29Z
dc.date.accessioned2018-03-29T01:54:14Z
dc.date.available2018-03-29T01:54:14Z
dc.identifierJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, n.11, p.6390-6395, 2009
dc.identifier1533-4880
dc.identifier10.1166/jnn.2009.1308
dc.identifierhttp://dx.doi.org/10.1166/jnn.2009.1308
dc.identifierhttp://apps.isiknowledge.com/InboundService.do?Func=Frame&product=WOS&action=retrieve&SrcApp=EndNote&UT=000270471100019&Init=Yes&SrcAuth=ResearchSoft&mode=FullRecord
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/417
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/417
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1308546
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionIn this work we explore the noise characteristics in lithographically-defined two terminal devices containing self-assembled InAs/InP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot.
dc.description9
dc.description11
dc.description6390
dc.description6395
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.languageeng
dc.publisherAMER SCIENTIFIC PUBLISHERS
dc.publisherEstados Unidos
dc.relationJournal of Nanoscience and Nanotechnology
dc.rightsfechado
dc.rightsCopyright AMER SCIENTIFIC PUBLISHERS
dc.sourceWOS
dc.subjectQuantum Dots
dc.subjectInAs/InP
dc.subjectRandom Telegraph Noise
dc.subjectHopping Transport
dc.subjectFIELD-EFFECT TRANSISTORS
dc.subjectELECTRICAL-PROPERTIES
dc.subjectNANOSTRUCTURES
dc.subjectTRANSPORT
dc.subjectTHRESHOLD
dc.subjectWIRES
dc.subject1/F
dc.subjectChemistry, Multidisciplinary
dc.subjectNanoscience & Nanotechnology
dc.subjectMaterials Science, Multidisciplinary
dc.subjectPhysics, Applied
dc.subjectPhysics, Condensed Matter
dc.titleProbing Individual Quantum Dots: Noise in Self-Assembled Systems
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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