| dc.creator | Araujo e Nobrega | |
| dc.creator | J.; Orsi Gordo | |
| dc.creator | V.; Galeti | |
| dc.creator | H. V. A.; Galvao Gobato | |
| dc.creator | Y.; Brasil | |
| dc.creator | M. J. S. P.; Taylor | |
| dc.creator | D.; Orlita | |
| dc.creator | M.; Henini | |
| dc.creator | M. | |
| dc.date | 2015-DEC | |
| dc.date | 2016-06-07T13:35:28Z | |
| dc.date | 2016-06-07T13:35:28Z | |
| dc.date.accessioned | 2018-03-29T01:51:01Z | |
| dc.date.available | 2018-03-29T01:51:01Z | |
| dc.identifier | | |
| dc.identifier | Spin Polarization Of Carriers In Resonant Tunneling Devices Containing Inas Self-assembled Quantum Dots. Academic Press Ltd- Elsevier Science Ltd, v. 88, p. 574-581 DEC-2015. | |
| dc.identifier | 0749-6036 | |
| dc.identifier | WOS:000367276600069 | |
| dc.identifier | 10.1016/j.spmi.2015.10.018 | |
| dc.identifier | http://www.sciencedirect.com/science/article/pii/S0749603615302366 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/244139 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1307837 | |
| dc.description | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description | In this work, we have investigated transport and optical properties of n-i-n resonant tunneling diodes (RTDs) containing a layer of InAs self-assembled quantum dots (QDs) grown on a (311)B oriented GaAs substrate. Polarization-resolved photoluminescence (PL) and magneto-transport measurements were performed under applied voltage and magnetic fields up to 15 T at 2 K under linearly polarized laser excitation. It was observed that the QD circular polarization degree depends strongly on the applied voltage. Its voltage dependence is explained by the formation of excitonic complexes such as positively (X+) and negatively (X-) charged excitons in the QDs. Our results demonstrate an effective electrical control of an ensemble of InAs QD properties by tuning the applied voltage across a RID device into the resonant tunneling condition. (C) 2015 Elsevier Ltd. All rights reserved. | |
| dc.description | 88 | |
| dc.description | | |
| dc.description | | |
| dc.description | 574 | |
| dc.description | 581 | |
| dc.description | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description | UK Engineering and Physical Sciences Research Council | |
| dc.description | EuroMagNET II under the EU contract [228043] | |
| dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description | FAPESP [2012/24055-6] | |
| dc.description | | |
| dc.description | | |
| dc.description | | |
| dc.language | en | |
| dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | |
| dc.publisher | | |
| dc.publisher | LONDON | |
| dc.relation | SUPERLATTICES AND MICROSTRUCTURES | |
| dc.rights | embargo | |
| dc.source | WOS | |
| dc.subject | Optical Anisotropy | |
| dc.subject | Spectroscopy | |
| dc.title | Spin Polarization Of Carriers In Resonant Tunneling Devices Containing Inas Self-assembled Quantum Dots | |
| dc.type | Artículos de revistas | |
