Exploring Crystal Phase Switching In Gap Nanowires

dc.creatorAssali
dc.creatorS.; Gagliano
dc.creatorL.; Oliveira
dc.creatorD. S.; Verheijen
dc.creatorM. A.; Pissard
dc.creatorS. R.; Feiner
dc.creatorL. F.; Bakkers
dc.creatorE. P. A. M.
dc.date2015-DEC
dc.date2016-06-07T13:35:05Z
dc.date2016-06-07T13:35:05Z
dc.date.accessioned2018-03-29T01:50:38Z
dc.date.available2018-03-29T01:50:38Z
dc.identifier
dc.identifierExploring Crystal Phase Switching In Gap Nanowires. Amer Chemical Soc, v. 15, p. 8062-8069 DEC-2015.
dc.identifier1530-6984
dc.identifierWOS:000366339600042
dc.identifier10.1021/acs.nanolett.5b03484
dc.identifierhttp://pubs.acs.org/doi/10.1021/acs.nanolett.5b03484
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/244045
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1307743
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionThe growth of wurtzite/zincblende (WZ and ZB, respectively) superstructures opens new avenues for band structure engineering and holds the promise of digitally controlling the energy spectrum of quantum confined systems. Here, we study growth kinetics of pure and thus defect-free WZ/ZB homostructures in GaP nanowires with the aim to obtain monolayer control of the ZB and WZ segment lengths. We find that the Ga concentration and the supersaturation in the catalyst particle are the key parameters determining growth kinetics. These parameters can be tuned by the gallium partial pressure and the temperature. The formation of WZ and ZB can be understood with a model based on nucleation either at the triple phase line for the WZ phase or in the center of the solid liquid interface for the ZB phase. Furthermore, the observed delay/offset time needed to induce WZ and ZB growth after growth of the other phase can be explained within this framework.
dc.description15
dc.description12
dc.description
dc.description8062
dc.description8069
dc.descriptionDutch Organization for Scientific Research [NWO-VICI 700.10.441]
dc.descriptionDutch Technology Foundation [STW 12744]
dc.descriptionPhilips Research
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionFAPESP [2013/24902-3]
dc.description
dc.description
dc.description
dc.languageen
dc.publisherAMER CHEMICAL SOC
dc.publisher
dc.publisherWASHINGTON
dc.relationNANO LETTERS
dc.rightsfechado
dc.sourceWOS
dc.subjectGallium-phosphide Nanowires
dc.subjectIii-v Nanowires
dc.subjectGaas Nanowires
dc.subjectQuantum-dot
dc.subjectGrowth
dc.subjectMorphology
dc.subjectArrays
dc.titleExploring Crystal Phase Switching In Gap Nanowires
dc.typeArtículos de revistas


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