Identification Of The Chemical Bonding Prompting Adhesion Of A-c:h Thin Films On Ferrous Alloy Intermediated By A Sicx:h Buffer Layer

dc.creatorCemin
dc.creatorF.; Bim
dc.creatorL. T.; Leidens
dc.creatorL. M.; Morales
dc.creatorM.; Baumvol
dc.creatorI. J. R.; Alvarez
dc.creatorF.; Figueroa
dc.creatorC. A.
dc.date2015-Jul
dc.date2016-06-07T13:22:56Z
dc.date2016-06-07T13:22:56Z
dc.date.accessioned2018-03-29T01:42:27Z
dc.date.available2018-03-29T01:42:27Z
dc.identifier
dc.identifierIdentification Of The Chemical Bonding Prompting Adhesion Of A-c:h Thin Films On Ferrous Alloy Intermediated By A Sicx:h Buffer Layer. Amer Chemical Soc, v. 7, p. 15909-15917 Jul-2015.
dc.identifier1944-8244
dc.identifierWOS:000358897200026
dc.identifier10.1021/acsami.5b03554
dc.identifierhttp://www.ncbi.nlm.nih.gov/pubmed/26135943
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/243284
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1306982
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionAmorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bond's. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS): The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon carbon (C-C) and carbon silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.
dc.description7
dc.description29
dc.description
dc.description15909
dc.description15917
dc.descriptionUCS
dc.descriptionINCT-INES [554336/2010-3]
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionPETROBRAS [504062/2014-0]
dc.descriptionFAPERGS
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionSUMA2 Network Project
dc.descriptionEuropean Commission (IRSES Project) [318903]
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description
dc.description
dc.description
dc.languageen
dc.publisherAMER CHEMICAL SOC
dc.publisher
dc.publisherWASHINGTON
dc.relationACS APPLIED MATERIALS & INTERFACES
dc.rightsfechado
dc.sourceWOS
dc.subjectDiamond-like Carbon
dc.subjectTetramethylsilane Films
dc.subjectAmorphous-carbon
dc.subjectVapor-deposition
dc.subjectIon-bombardment
dc.subjectPlasma
dc.subjectStress
dc.subjectSteel
dc.subjectSpectroscopy
dc.subjectInterlayer
dc.titleIdentification Of The Chemical Bonding Prompting Adhesion Of A-c:h Thin Films On Ferrous Alloy Intermediated By A Sicx:h Buffer Layer
dc.typeArtículos de revistas


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