Probing Individual Quantum Dots: Noise In Self-assembled Systems.

dc.creatorVicaro, K O
dc.creatorGutiérrez, H R
dc.creatorSeabra, A C
dc.creatorSchulz, P A
dc.creatorCotta, M A
dc.date2009-Nov
dc.date2015-11-27T13:15:40Z
dc.date2015-11-27T13:15:40Z
dc.date.accessioned2018-03-29T01:09:39Z
dc.date.available2018-03-29T01:09:39Z
dc.identifierJournal Of Nanoscience And Nanotechnology. v. 9, n. 11, p. 6390-5, 2009-Nov.
dc.identifier1533-4880
dc.identifier
dc.identifierhttp://www.ncbi.nlm.nih.gov/pubmed/19908539
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/198529
dc.identifier19908539
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1298762
dc.descriptionIn this work we explore the noise characteristics in lithographically-defined two terminal devices containing self-assembled InAs/InP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot.
dc.description9
dc.description6390-5
dc.languageeng
dc.relationJournal Of Nanoscience And Nanotechnology
dc.relationJ Nanosci Nanotechnol
dc.rightsfechado
dc.rights
dc.sourcePubMed
dc.subjectComputer Simulation
dc.subjectComputer-aided Design
dc.subjectData Interpretation, Statistical
dc.subjectEquipment Design
dc.subjectEquipment Failure Analysis
dc.subjectLighting
dc.subjectModels, Statistical
dc.subjectQuantum Dots
dc.subjectReproducibility Of Results
dc.subjectSensitivity And Specificity
dc.titleProbing Individual Quantum Dots: Noise In Self-assembled Systems.
dc.typeArtículos de revistas


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