Evidence Of Space Charge Regions Within Semiconductor Nanowires From Kelvin Probe Force Microscopy.

dc.creatorNarváez, Angela C
dc.creatorChiaramonte, Thalita
dc.creatorVicaro, Klaus O
dc.creatorClerici, João H
dc.creatorCotta, Mônica A
dc.date2009-Nov
dc.date2015-11-27T13:15:37Z
dc.date2015-11-27T13:15:37Z
dc.date.accessioned2018-03-29T01:09:34Z
dc.date.available2018-03-29T01:09:34Z
dc.identifierNanotechnology. v. 20, n. 46, p. 465705, 2009-Nov.
dc.identifier1361-6528
dc.identifier10.1088/0957-4484/20/46/465705
dc.identifierhttp://www.ncbi.nlm.nih.gov/pubmed/19843990
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/198507
dc.identifier19843990
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1298740
dc.descriptionWe have studied the equilibrium electrostatic profile of III-V semiconductor nanowires using Kelvin probe force microscopy. Qualitative agreement of the measured surface potential levels and expected Fermi level variation for pure InP and InAs nanowires is obtained from electrical images with spatial resolution as low as 10 nm. Surface potential mapping for pure and heterostructured nanowires suggests the existence of charge transfer mechanisms and the formation of a metal-semiconductor electrical contact at the nanowire apex.
dc.description20
dc.description465705
dc.languageeng
dc.relationNanotechnology
dc.relationNanotechnology
dc.rightsfechado
dc.rights
dc.sourcePubMed
dc.titleEvidence Of Space Charge Regions Within Semiconductor Nanowires From Kelvin Probe Force Microscopy.
dc.typeArtículos de revistas


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