Electron Lande g factor in GaAs-(Ga,Al)As quantum wells under applied magnetic fields: Effects of Dresselhaus spin splitting

dc.creatorReyes-Gomez, E
dc.creatorPorras-Montenegro, N
dc.creatorPerdomo-Leiva, CA
dc.creatorBrandi, HS
dc.creatorOliveira, LE
dc.date2008
dc.date42186
dc.date2014-11-13T12:35:00Z
dc.date2015-11-26T18:07:27Z
dc.date2014-11-13T12:35:00Z
dc.date2015-11-26T18:07:27Z
dc.date.accessioned2018-03-29T00:49:35Z
dc.date.available2018-03-29T00:49:35Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 104, n. 2, 2008.
dc.identifier0021-8979
dc.identifierWOS:000258174800055
dc.identifier10.1063/1.2956698
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/64486
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/64486
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/64486
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1293594
dc.descriptionThe effects of the Dresselhaus spin splitting on the Lande g factor associated with conduction electrons in GaAs-(Ga,Al)As quantum wells are studied by using the nonparabolic Ogg-McCombe effective Hamiltonian. The g factor and cyclotron effective mass are calculated as functions of applied magnetic fields (along both the growth and in-plane directions) and GaAs well widths of the heterostructure. Present calculations indicate that in GaAs-(Ga,Al)As heterostructures, the inclusion of the Dresselhaus term leads to very small corrections in the effective Lande factor. Taking into account the effects of nonparabolic and anisotropic terms in the Hamiltonian is fundamental in obtaining quantitative agreement with experimental measurements. Moreover, the present results suggest that previous theoretical work on the Dresselhaus spin-splitting effects on the effective Lande factor should be viewed with caution if nonparabolic and anisotropic effects are not taken into account. (c) 2008 American Institute of Physics.
dc.description104
dc.description2
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectConduction-band
dc.subjectCyclotron-resonance
dc.subjectAnisotropy
dc.subjectSemiconductors
dc.subjectGaas
dc.subjectNonparabolicity
dc.subjectSpintronics
dc.subjectInsb
dc.titleElectron Lande g factor in GaAs-(Ga,Al)As quantum wells under applied magnetic fields: Effects of Dresselhaus spin splitting
dc.typeArtículos de revistas


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