Electron field emission from boron doped microcrystalline diamond

dc.creatorRoos, M
dc.creatorBaranauskas, V
dc.creatorFontana, M
dc.creatorCeragioli, HJ
dc.creatorPeterlevitz, AC
dc.creatorMallik, K
dc.creatorDegasperi, FT
dc.date2007
dc.date42186
dc.date2014-11-13T12:31:55Z
dc.date2015-11-26T18:07:23Z
dc.date2014-11-13T12:31:55Z
dc.date2015-11-26T18:07:23Z
dc.date.accessioned2018-03-29T00:49:32Z
dc.date.available2018-03-29T00:49:32Z
dc.identifierApplied Surface Science. Elsevier Science Bv, v. 253, n. 18, n. 7381, n. 7386, 2007.
dc.identifier0169-4332
dc.identifierWOS:000247863800006
dc.identifier10.1016/j.apsusc.2007.03.023
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/64481
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/64481
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/64481
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1293577
dc.descriptionField emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N-B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E-th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm(-2) were obtained using electric fields less than 8 V/mu m. (c) 2007 Elsevier B.V. All rights reserved.
dc.description253
dc.description18
dc.description7381
dc.description7386
dc.languageen
dc.publisherElsevier Science Bv
dc.publisherAmsterdam
dc.publisherHolanda
dc.relationApplied Surface Science
dc.relationAppl. Surf. Sci.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectboron doped diamond surface
dc.subjectelectron field emission
dc.subjectchemical vapor deposited diamond
dc.subjectthreshold field for electron emission
dc.subjectemission properties of surface sites
dc.subjectChemical-vapor-deposition
dc.subjectSemiconducting Diamond
dc.subjectRaman-scattering
dc.subjectFilms
dc.subjectAffinity
dc.subjectConduction
dc.subjectSurfaces
dc.subjectSilicon
dc.subjectSuperconductivity
dc.subjectInterference
dc.titleElectron field emission from boron doped microcrystalline diamond
dc.typeArtículos de revistas


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