DEPTH RESOLUTION FOR AES SPUTTER PROFILES OF GAAS/GAINAS STRAINED SUPERLATTICES

dc.creatorMORAIS, J
dc.creatorFAZAN, TA
dc.creatorLANDERS, R
dc.date1993
dc.dateOCT
dc.date2014-12-16T11:35:16Z
dc.date2015-11-26T18:04:31Z
dc.date2014-12-16T11:35:16Z
dc.date2015-11-26T18:04:31Z
dc.date.accessioned2018-03-29T00:46:39Z
dc.date.available2018-03-29T00:46:39Z
dc.identifierApplied Surface Science. Elsevier Science Bv, v. 72, n. 2, n. 171, n. 174, 1993.
dc.identifier0169-4332
dc.identifierWOS:A1993MB21900008
dc.identifier10.1016/0169-4332(93)90008-Y
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/79514
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/79514
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/79514
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1292874
dc.descriptionThe effect of varying the energy (250-2000 eV) and angle of incidence (50-degrees or 80-degrees) of Ar ions used to sputter etch a surface was observed on depth profiles of strained GaAs/Ga0.81In0.19As superlattices studied by Auger electron spectroscopy (AES). The superlattices were grown by atmospheric-pressure metal-organic chemical vapor deposition (MOCVD) with a nominal layer thickness of 50 angstrom. We show that using ion energies of around 500 eV and grazing incidence minimizes the artifacts due to the interaction between the ion beam and the surface.
dc.description72
dc.description2
dc.description171
dc.description174
dc.languageen
dc.publisherElsevier Science Bv
dc.publisherAmsterdam
dc.publisherHolanda
dc.relationApplied Surface Science
dc.relationAppl. Surf. Sci.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectAuger-electron Spectroscopy
dc.subjectInp
dc.titleDEPTH RESOLUTION FOR AES SPUTTER PROFILES OF GAAS/GAINAS STRAINED SUPERLATTICES
dc.typeArtículos de revistas


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