dc.creatorSilva, AAP
dc.creatorAlgarte, ACS
dc.creatorVasconcellos, AR
dc.creatorLuzzi, R
dc.date2001
dc.dateOCT 15
dc.date2014-11-19T11:06:37Z
dc.date2015-11-26T18:02:38Z
dc.date2014-11-19T11:06:37Z
dc.date2015-11-26T18:02:38Z
dc.date.accessioned2018-03-29T00:44:21Z
dc.date.available2018-03-29T00:44:21Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 90, n. 8, n. 3973, n. 3978, 2001.
dc.identifier0021-8979
dc.identifierWOS:000171562100043
dc.identifier10.1063/1.1402138
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/70834
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/70834
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/70834
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1292292
dc.descriptionThe so-called hot-phonon effect that accompanies the rapid relaxation processes in the photoinjected plasma in semiconductors is analyzed, resorting to a nonlinear quantum kinetic theory based on a nonequilibrium ensemble formalism. We concentrate the study on the process of generation and decay of the nonequilibrium longitudinal optical phonon population per mode. Particular attention is paid to the question of the influence of the conditions of excitation imposed on the system, which determine the occurrence of different regimes of relaxation by means of carrier-phonon interactions. Comparison of the relaxation dynamics in the case of several semiconductors with different polar strengths is done. (C) 2001 American Institute of Physics.
dc.description90
dc.description8
dc.description3973
dc.description3978
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectCoupled-mode Contributions
dc.subjectPolar Semiconductors
dc.subjectElectron Relaxation
dc.subjectPhotoexcited Electrons
dc.subjectDissipative Processes
dc.subjectExcited Plasma
dc.subjectGaas
dc.subjectGeneration
dc.subjectEvolution
dc.subjectKinetics
dc.titleRelaxation dynamics of hot carriers and phonons in semiconductors: Influence of the excitation conditions
dc.typeArtículos de revistas


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