dc.creatorSercheli, MS
dc.creatorRettori, C
dc.creatorZanatta, AR
dc.date2003
dc.dateOCT
dc.date2014-11-19T10:07:48Z
dc.date2015-11-26T18:02:12Z
dc.date2014-11-19T10:07:48Z
dc.date2015-11-26T18:02:12Z
dc.date.accessioned2018-03-29T00:43:51Z
dc.date.available2018-03-29T00:43:51Z
dc.identifierSolid State Communications. Pergamon-elsevier Science Ltd, v. 128, n. 41700, n. 47, n. 50, 2003.
dc.identifier0038-1098
dc.identifierWOS:000185533100002
dc.identifier10.1016/S0038-1098(03)00654-9
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/65318
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/65318
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/65318
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1292167
dc.descriptionAmorphous silicon-nitrogen (a-SiN) thin films doped with rare-earth elements (RE = Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu) were prepared by cosputtering and studied by means of electron spin resonance. It was found that the neutral dangling bond density, [D-0], of the a-SiN films decreases with the presence of magnetic REs and the drop in [D-0] approximately scales with the de Gennes and/or the spin factor of each RE element. Similar to the decrease in T-c in RE-doped superconductors, our experimental results strongly suggest that an exchange-like interaction, H similar to J(RE.D0)S(RE).S-D0, between the spin of the magnetic REs and that of the D-0 is taking place. (C) 2003 Published by Elsevier Ltd.
dc.description128
dc.description41700
dc.description47
dc.description50
dc.languageen
dc.publisherPergamon-elsevier Science Ltd
dc.publisherOxford
dc.publisherInglaterra
dc.relationSolid State Communications
dc.relationSolid State Commun.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectthin films
dc.subjectimpurities in semiconductors
dc.subjectorder-disorder effects
dc.subjectspin-orbit effects
dc.subjectelectron paramagnetic resonance
dc.subjectMetal-insulator-transition
dc.subjectSilicon Nitride Films
dc.subjectAlloys
dc.subjectLuminescence
dc.titleNeutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements
dc.typeArtículos de revistas


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