dc.creatorALGARTE, AC
dc.creatorVASCONCELLOS, AR
dc.creatorLUZZI, R
dc.date1994
dc.dateNOV
dc.date2014-12-16T11:34:18Z
dc.date2015-11-26T17:59:53Z
dc.date2014-12-16T11:34:18Z
dc.date2015-11-26T17:59:53Z
dc.date.accessioned2018-03-29T00:42:24Z
dc.date.available2018-03-29T00:42:24Z
dc.identifierSolid State Communications. Pergamon-elsevier Science Ltd, v. 92, n. 8, n. 649, n. 653, 1994.
dc.identifier0038-1098
dc.identifierWOS:A1994PQ59200005
dc.identifier10.1016/0038-1098(94)90446-4
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/65399
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/65399
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/65399
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1291836
dc.descriptionWe consider nonlinear charge transport of carriers in a photoexcited plasma in polar semiconductors. The diffusion and mobility kinetic coefficients in such conditions are obtained resorting to a nonequilibrium statistical thermodynamic approach. A generalized Einstein relation is derived for the nonequilibrium carriers (electrons and holes) for weak and intermediate electric field strengths. We discuss the effect of the irreversible evolution of the system and of the non-Ohmic behavior on such generalized Einstein relation.
dc.description92
dc.description8
dc.description649
dc.description653
dc.languageen
dc.publisherPergamon-elsevier Science Ltd
dc.publisherOxford
dc.publisherInglaterra
dc.relationSolid State Communications
dc.relationSolid State Commun.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectSEMICONDUCTORS
dc.subjectELECTRONIC TRANSPORT
dc.subjectTHERMODYNAMIC PROPERTIES
dc.subjectHEAT CONDUCTION
dc.titleEINSTEIN RELATION FOR NONLINEAR CHARGE-TRANSPORT IN PHOTOEXCITED POLAR SEMICONDUCTORS
dc.typeArtículos de revistas


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