| dc.creator | Hammer, P | |
| dc.creator | Victoria, NM | |
| dc.creator | Alvarez, F | |
| dc.date | 1998 | |
| dc.date | SEP-OCT | |
| dc.date | 2014-12-02T16:27:23Z | |
| dc.date | 2015-11-26T17:59:46Z | |
| dc.date | 2014-12-02T16:27:23Z | |
| dc.date | 2015-11-26T17:59:46Z | |
| dc.date.accessioned | 2018-03-29T00:42:02Z | |
| dc.date.available | 2018-03-29T00:42:02Z | |
| dc.identifier | Journal Of Vacuum Science & Technology A. A V S Amer Inst Physics, v. 16, n. 5, n. 2941, n. 2949, 1998. | |
| dc.identifier | 0734-2101 | |
| dc.identifier | WOS:000076017300028 | |
| dc.identifier | 10.1116/1.581443 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/64546 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/64546 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/64546 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1291742 | |
| dc.description | Hydrogen-induced changes on the electronic and structural properties of amorphous carbon nitride (a-CN(x):H) prepared by ion beam assisted deposition are investigated by x-ray photoelectron, ultraviolet photoelectron, infrared, and Raman spectroscopies. Two series of specimen are studied: films with a constant nitrogen content (C/N = 26%) grown at 150 degrees C using different hydrogen partial pressures between 0% and 70% and samples deposited at different substrate temperatures (150-500 degrees C) with fixed Hz partial pressure of 60%. The pronounced changes of the N 1s and C 1s core level spectra on increasing hydrogen incorporation (up to 17 at. %) are interpreted as due to the formation of terminating NH and CH bonds accompanied by modifications of the local C-N bonding structure. Corresponding changes are observed in the He II valence band spectra showing a recession of the leading edge of more than 0.9 eV while the optical band gap widens from 0 to more than 1 eV. Consistent with these results, the information obtained from the infrared and Raman spectra suggests a hydrogen induced transformation of the disordered sp(2)/sp(3) network into a polymerlike structure. With increasing substrate temperature a reversed process takes place. At 700 degrees C an increasing graphitization of the films is observed, but the effect of hydrogen on the structure influencing the growth kinetics is still present at this temperature. The nitrogen concentration (N/C) of about 30% indicates high thermal stability of the CN material. (C) 1998 American Vacuum Society. [S0734-2101(98)05705-4]. | |
| dc.description | 16 | |
| dc.description | 5 | |
| dc.description | 2941 | |
| dc.description | 2949 | |
| dc.language | en | |
| dc.publisher | A V S Amer Inst Physics | |
| dc.publisher | Melville | |
| dc.publisher | EUA | |
| dc.relation | Journal Of Vacuum Science & Technology A | |
| dc.relation | J. Vac. Sci. Technol. A | |
| dc.rights | aberto | |
| dc.source | Web of Science | |
| dc.subject | Chemical-vapor-deposition | |
| dc.subject | Photoelectron-spectroscopy | |
| dc.subject | Amorphous-carbon | |
| dc.subject | C-h | |
| dc.title | Electronic structure of hydrogenated carbon nitride films | |
| dc.type | Artículos de revistas | |
