dc.creatorNieto, L
dc.creatorBortoleto, JRR
dc.creatorCotta, MA
dc.creatorMagalhaes-Paniago, R
dc.creatorGutierrez, HR
dc.date2007
dc.dateAUG 6
dc.date2014-11-19T04:51:08Z
dc.date2015-11-26T17:57:36Z
dc.date2014-11-19T04:51:08Z
dc.date2015-11-26T17:57:36Z
dc.date.accessioned2018-03-29T00:41:09Z
dc.date.available2018-03-29T00:41:09Z
dc.identifierApplied Physics Letters. Amer Inst Physics, v. 91, n. 6, 2007.
dc.identifier0003-6951
dc.identifierWOS:000248661400128
dc.identifier10.1063/1.2764446
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/75150
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/75150
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/75150
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1291527
dc.descriptionThe authors have investigated strain relaxation in InAs/InGaAs/InP nanowires (NW's). Transmission electron microscopy images show an additional stress field attributed to compositional modulation in the ternary layer, which disrupts NW formation and drives Ga interdiffusion into InAs, according to grazing incidence x-Ray diffraction under anomalous scattering conditions. The strain profile along the NW, however, is not significantly affected when interdiffusion is considered. Results show that the InAs NW energetic stability is preserved with the introduction of ternary buffer layer in the structure. (c) 2007 American Institute of Physics.
dc.description91
dc.description6
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationApplied Physics Letters
dc.relationAppl. Phys. Lett.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectX-ray-diffraction
dc.subjectQuantum Dots
dc.subjectNanostructures
dc.subjectExchange
dc.subjectSystems
dc.subjectLayers
dc.subjectWires
dc.titleStrain relaxation and stress-driven interdiffusion in InAs/InGaAs/InP nanowires
dc.typeArtículos de revistas


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