Optoelectronic and structural properties of a-Ge1-xCx : H prepared by rf reactive cosputtering

dc.creatorVilcarromero, J
dc.creatorMarques, FC
dc.creatorFreire, FL
dc.date1998
dc.date37073
dc.date2014-12-02T16:26:49Z
dc.date2015-11-26T17:45:05Z
dc.date2014-12-02T16:26:49Z
dc.date2015-11-26T17:45:05Z
dc.date.accessioned2018-03-29T00:27:22Z
dc.date.available2018-03-29T00:27:22Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 84, n. 1, n. 174, n. 180, 1998.
dc.identifier0021-8979
dc.identifierWOS:000075258100021
dc.identifier10.1063/1.368093
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/69565
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/69565
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/69565
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1288075
dc.descriptionOptoelectronic, structural, and mechanical properties of hydrogenated amorphous germanium carbon (a-Ge1-xCx:H) alloys are presented. The films were prepared by the rf cosputtering technique using graphite-germanium composite targets. Films with carbon contents in the 0<x <1 range were prepared under the same conditions used to obtain a-Ge:H films with good optoelectronic properties. The trends of the optical gap, infrared absorption, dark conductivity, and mechanical stress as a function of the carbon content suggest that the properties of films with low carbon concentration are mainly controlled by the incorporation of sp(3) hybridized carbon. These films have good optoelectronic and structural properties. As the carbon content increases, the properties of the films are determined by the concentration of sp(2) carbon sites. (C) 1998 American Institute of Physics.
dc.description84
dc.description1
dc.description174
dc.description180
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherWoodbury
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectGermanium Nitrogen Alloys
dc.subjectElectron-spin-resonance
dc.subjectA-ge-h
dc.subjectAmorphous Hydrogenated Germanium
dc.subjectThin-films
dc.subjectDeposition Conditions
dc.subjectC Films
dc.subjectSi-c
dc.subjectCarbon
dc.subjectSilicon
dc.titleOptoelectronic and structural properties of a-Ge1-xCx : H prepared by rf reactive cosputtering
dc.typeArtículos de revistas


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