Polarized and resonant Raman spectroscopy on single InAs nanowires

dc.creatorMoller, M
dc.creatorde Lima, MM
dc.creatorCantarero, A
dc.creatorDacal, LCO
dc.creatorMadureira, JR
dc.creatorIikawa, F
dc.creatorChiaramonte, T
dc.creatorCotta, MA
dc.date2011
dc.dateAUG 26
dc.date2014-07-30T18:09:40Z
dc.date2015-11-26T17:43:15Z
dc.date2014-07-30T18:09:40Z
dc.date2015-11-26T17:43:15Z
dc.date.accessioned2018-03-29T00:25:16Z
dc.date.available2018-03-29T00:25:16Z
dc.identifierPhysical Review B. Amer Physical Soc, v. 84, n. 8, 2011.
dc.identifier1098-0121
dc.identifierWOS:000294325400012
dc.identifier10.1103/PhysRevB.84.085318
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/70621
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/70621
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1287536
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionWe report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E(1) transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E(1) transitions.
dc.description84
dc.description8
dc.descriptionSpanish Ministry of Science and Innovation [TEC2009-12075, MAT2009-10350]
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionSpanish Ministry of Science and Innovation [TEC2009-12075, MAT2009-10350]
dc.languageen
dc.publisherAmer Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.rightshttp://publish.aps.org/authors/transfer-of-copyright-agreement
dc.sourceWeb of Science
dc.subjectIii-v Nanowires
dc.subjectSemiconducting Nanowires
dc.subjectScattering
dc.subjectWurtzite
dc.subjectGrowth
dc.subjectZincblende
dc.subjectModes
dc.titlePolarized and resonant Raman spectroscopy on single InAs nanowires
dc.typeArtículos de revistas


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