dc.creatorPaniago, R
dc.creatorde Siervo, A
dc.creatorSoares, EA
dc.creatorPfannes, HD
dc.creatorLanders, R
dc.date2004
dc.date37073
dc.date2014-11-16T23:59:52Z
dc.date2015-11-26T17:41:31Z
dc.date2014-11-16T23:59:52Z
dc.date2015-11-26T17:41:31Z
dc.date.accessioned2018-03-29T00:23:18Z
dc.date.available2018-03-29T00:23:18Z
dc.identifierSurface Science. Elsevier Science Bv, v. 560, n. 41699, n. 27, n. 34, 2004.
dc.identifier0039-6028
dc.identifierWOS:000222269100005
dc.identifier10.1016/j.susc.2004.05.047
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/59184
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/59184
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/59184
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1287031
dc.descriptionOn the basis of a high-precision reflection high-energy electron diffraction (RHEED) investigation details of the growth of Pd on a Cu(1 1 1) single crystal substrate at room temperature are reported. Because of the +7.6% misfit of the Pd lattice spacing as compared to Cu, perfect pseudomorphous growth would result in highly stressed ultra-thin films. RHEED analysis shows that as a function of Pd coverage initially the film starts to grow with the in-plane Cu(1 1 1) lattice parameter. With increasing coverage the lattice parameter rapidly changes to the "natural" lateral lattice parameter of Pd(1 1 1). We propose that a progressive increase of the equilibrium lateral lattice parameter by alloying (Vegards law) releases the stress in the Pd/Cu(1 1 1) system. With a coverage of n > 2 ML (n = number of monolayers, ML) pure Pd layers are formed, since the in-plane lattice parameter equals the expected value for Pd at n = 2 ML. Our conclusion that Pd-Cu surface alloying acts as a relaxation mechanism in this quasi-pseudomorphous growth system, corroborates scanning tunneling microscopy [Surf. Sci. 408 (1998) 43] which also suggests formation of a random surface alloy in the earlier stages of Pd growth on Cu(1 1 1). (C) 2004 Elsevier B.V. All rights reserved.
dc.description560
dc.description41699
dc.description27
dc.description34
dc.languageen
dc.publisherElsevier Science Bv
dc.publisherAmsterdam
dc.publisherHolanda
dc.relationSurface Science
dc.relationSurf. Sci.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectcopper
dc.subjectpalladium
dc.subjectlow index single crystal surfaces
dc.subjectmolecular beam epitaxy
dc.subjectreflection high-energy electron diffraction (RHEED)
dc.subjectalloys
dc.subjectPhotoelectron Diffraction
dc.subjectStep-flow
dc.subjectPt/cu(111)
dc.subjectCu(100)
dc.subjectRheed
dc.subjectPlatinum
dc.subjectCu(iii)
dc.subjectFilms
dc.subjectCu
dc.titlePd growth on Cu(111): stress relaxation through surface alloying?
dc.typeArtículos de revistas


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