dc.creatorLaureto, E
dc.creatorVasconcellos, AR
dc.creatorMeneses, EA
dc.creatorLuzzi, R
dc.date2004
dc.dateMAY 10
dc.date2014-11-17T15:24:17Z
dc.date2015-11-26T17:39:44Z
dc.date2014-11-17T15:24:17Z
dc.date2015-11-26T17:39:44Z
dc.date.accessioned2018-03-29T00:21:18Z
dc.date.available2018-03-29T00:21:18Z
dc.identifierInternational Journal Of Modern Physics B. World Scientific Publ Co Pte Ltd, v. 18, n. 12, n. 1743, n. 1758, 2004.
dc.identifier0217-9792
dc.identifierWOS:000222929800007
dc.identifier10.1142/S021797920402480X
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/62862
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/62862
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/62862
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1286523
dc.descriptionQuantum wells with fractal-like interfaces arise in the growth of semiconductor heterostructures. Such fractal characteristics largely influence the optical and transport properties in these constrained geometries. We report a systematic study of growth through the study of optical properties. The spectra obtained show "anomalous behavior", whose characteristics depends on the growth procedure. The theoretical analysis was performed resorting to an unconventional statistical-mechanical formalism. It allows one to correlate growth conditions with surface roughness, and to determine their influence on experimental results, allowing one to obtain a picture of the physics involved in such systems.
dc.description18
dc.description12
dc.description1743
dc.description1758
dc.languageen
dc.publisherWorld Scientific Publ Co Pte Ltd
dc.publisherSingapore
dc.publisherSingapura
dc.relationInternational Journal Of Modern Physics B
dc.relationInt. J. Mod. Phys. B
dc.rightsfechado
dc.sourceWeb of Science
dc.subjectquantum wells
dc.subjectphotoluminescence
dc.subjectfractality in growth
dc.subjectquality characterization
dc.subjectunconventional statistical approach
dc.subjectPhotoluminescence
dc.subjectSpectra
dc.titleCharacterization of nanometric quantum wells in semiconductor heterostructures by optical spectroscopy
dc.typeArtículos de revistas


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