dc.creatorChiaramonte, T
dc.creatorRomero, MJ
dc.creatorFabreguette, F
dc.creatorCardoso, LP
dc.creatorSacilotti, M
dc.date2009
dc.dateMAR
dc.date2014-11-17T14:02:04Z
dc.date2015-11-26T17:38:53Z
dc.date2014-11-17T14:02:04Z
dc.date2015-11-26T17:38:53Z
dc.date.accessioned2018-03-29T00:20:34Z
dc.date.available2018-03-29T00:20:34Z
dc.identifierJournal Of Luminescence. Elsevier Science Bv, v. 129, n. 3, n. 176, n. 180, 2009.
dc.identifier0022-2313
dc.identifierWOS:000262884400003
dc.identifier10.1016/j.jlumin.2008.09.011
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/78517
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/78517
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/78517
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1286339
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionCathodoluminescence (CL) spectrum imaging and grazing incidence X-ray diffraction (GIXRD) are employed to investigate nitride three-dimensional (3D) gallium structures. The metallic precursors are naturally obtained on a large variety of substrates by metal-organic chemical vapor deposition (CVD) with different shape/size controlled by the growth conditions, especially the temperature. These 3D metallic structures are subsequently exposed to a nitridation process in a conventional CVD reactor to form GaN nanocrystals, as confirmed by GIXRD measurements. CL spectroscopy shows visible light emission (2.5-2.8 eV) excited from the GaN in the 3D structures. (C) 2008 Elsevier B.V. All rights reserved.
dc.description129
dc.description3
dc.description176
dc.description180
dc.descriptionANR-Filemon 3-5 France
dc.descriptionConseil Regional de Bourgogne-France
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionDepartment of Energy [DE-AC36-99GO10337]
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionDepartment of Energy [DE-AC36-99GO10337]
dc.languageen
dc.publisherElsevier Science Bv
dc.publisherAmsterdam
dc.publisherHolanda
dc.relationJournal Of Luminescence
dc.relationJ. Lumines.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectCathodoluminescence
dc.subjectMOCVD
dc.subjectMetal-organic
dc.subjectGaN 3D structure
dc.subjectThin-films
dc.subjectGan
dc.titleCathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución