Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates

dc.creatorRibeiro, E
dc.creatorBernussi, AA
dc.creatorMaltez, RL
dc.creatorCarvalho, W
dc.creatorGobbi, AL
dc.creatorUgarte, D
dc.date2006
dc.dateFEB
dc.date2014-11-17T11:59:38Z
dc.date2015-11-26T17:37:21Z
dc.date2014-11-17T11:59:38Z
dc.date2015-11-26T17:37:21Z
dc.date.accessioned2018-03-29T00:19:00Z
dc.date.available2018-03-29T00:19:00Z
dc.identifierPhysical Review B. American Physical Soc, v. 73, n. 7, 2006.
dc.identifier1098-0121
dc.identifierWOS:000235668900090
dc.identifier10.1103/PhysRevB.73.075330
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/55317
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/55317
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/55317
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1285935
dc.descriptionOptical and micro-structural properties of ordered/disordered/ordered InGaAsP quantum wells grown on GaAs substrates were investigated by photoluminescence spectroscopy, high-resolution transmission electron microscopy and selective area diffraction. Strong evidence of carrier localization effects was obtained from low temperature photoluminescence experiments. Photoluminescence spectra of thinner quantum wells were dominated by a broad emission band located at energies below the bandgap of the well material. The energy peak position of this emission varied considerably with the laser excitation power. Carrier localization was attributed to potential fluctuations in the barrier and well layers, as a result of two coexisting effects: Spontaneously atomic ordering and, in a minor degree, alloy inhomogeneities. We show that a reduction of the ordering degree in the bottom barrier layer resulted in a considerable decrease of localization effects in quaternary quantum well heterostructures.
dc.description73
dc.description7
dc.languageen
dc.publisherAmerican Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectChemical-vapor-deposition
dc.subjectOptical-properties
dc.subjectPhase Epitaxy
dc.subjectInterfaces
dc.subjectLuminescence
dc.subjectPressure
dc.subjectIngaasp
dc.titleBarrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates
dc.typeArtículos de revistas


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