Nucleation and growth evolution of InP dots on InGaP/GaAs

dc.creatorBortoleto, JRR
dc.creatorGazoto, A
dc.creatorBrasil, MJSP
dc.creatorMeneses, EA
dc.creatorCotta, MA
dc.date2010
dc.date44378
dc.date2014-11-15T03:11:33Z
dc.date2015-11-26T17:35:50Z
dc.date2014-11-15T03:11:33Z
dc.date2015-11-26T17:35:50Z
dc.date.accessioned2018-03-29T00:18:04Z
dc.date.available2018-03-29T00:18:04Z
dc.identifierJournal Of Physics D-applied Physics. Iop Publishing Ltd, v. 43, n. 28, 2010.
dc.identifier0022-3727
dc.identifierWOS:000279318600011
dc.identifier10.1088/0022-3727/43/28/285301
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/62194
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/62194
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/62194
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1285691
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionWe have investigated the evolution in the heteroepitaxy of InP on InGaP/GaAs (0 0 1) layers from the initial formation of a strained wetting layer (WL) up to the development of quantum dots. Atomic force microscopy and RHEED as well as continuous and time-resolved photoluminescence measurements provide evidence of four main stages for InP growth evolution. Our results indicate that the InP dot formation occurs according to the Stranski-Krastanov growth mode coupled to a WL erosion mechanism driven by the spatially variable strain field present in the WL. Moreover, the correlation of morphological and optical data indicates the stability of dot shapes and interfaces in this system.
dc.description43
dc.description28
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.languageen
dc.publisherIop Publishing Ltd
dc.publisherBristol
dc.publisherInglaterra
dc.relationJournal Of Physics D-applied Physics
dc.relationJ. Phys. D-Appl. Phys.
dc.rightsfechado
dc.rightshttp://iopscience.iop.org/page/copyright
dc.sourceWeb of Science
dc.subjectInas Quantum Dots
dc.subjectOptical-properties
dc.subjectEpitaxy
dc.subjectNanostructures
dc.subjectTransition
dc.subjectMorphology
dc.subjectGaas(001)
dc.subjectSize
dc.subjectGaas
dc.titleNucleation and growth evolution of InP dots on InGaP/GaAs
dc.typeArtículos de revistas


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