Broad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator

dc.creatorFoulk, H
dc.creatorO'Brien, S
dc.creatorGebretsadik, H
dc.creatorFrateschi, N
dc.creatorChoi, WJ
dc.creatorBond, AE
dc.date2005
dc.dateOCT
dc.date2014-11-15T03:15:31Z
dc.date2015-11-26T17:35:49Z
dc.date2014-11-15T03:15:31Z
dc.date2015-11-26T17:35:49Z
dc.date.accessioned2018-03-29T00:18:00Z
dc.date.available2018-03-29T00:18:00Z
dc.identifierIeee Photonics Technology Letters. Ieee-inst Electrical Electronics Engineers Inc, v. 17, n. 10, n. 2191, n. 2193, 2005.
dc.identifier1041-1135
dc.identifierWOS:000232149600062
dc.identifier10.1109/LPT.2005.856400
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/63270
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/63270
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/63270
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1285676
dc.descriptionIn this work, we demonstrate high analog performance of an eleetroabsorption (EA) Jumped-element modulator monolithically integrated with a semiconductor amplifier over a broad temperature and wavelength range. Using the Stark effect (bandedge tuning with bias), the amplified EA modulator exhibits minimal changes in second- and third-order spur-free dynamic range (SFDR) as well as link gain over a 45 degrees C range in chip temperature. We further demonstrate tunability of the amplified modulator over 25 nm of wavelength from 1530 to 1555 run with little-to-no degradation in SFDR, link gain, and noise figure.
dc.description17
dc.description10
dc.description2191
dc.description2193
dc.languageen
dc.publisherIeee-inst Electrical Electronics Engineers Inc
dc.publisherPiscataway
dc.publisherEUA
dc.relationIeee Photonics Technology Letters
dc.relationIEEE Photonics Technol. Lett.
dc.rightsfechado
dc.rightshttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dc.sourceWeb of Science
dc.subjectanalog
dc.subjectdynamic range
dc.subjecthigh speed
dc.subjecthigh-temperature
dc.subjectintegrated
dc.subjectlinear
dc.subjectmodulators
dc.subjectsemiconductor optical amplifiers
dc.subjecttunable
dc.subjectWave-guide
dc.subjectSemiconductor Amplifier
dc.subjectPerformance
dc.subjectBand
dc.titleBroad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator
dc.typeArtículos de revistas


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