dc.creatorOsso, JO
dc.creatorSchreiber, F
dc.creatorKruppa, V
dc.creatorDosch, H
dc.creatorGarriga, M
dc.creatorAlonso, MI
dc.creatorCerdeira, F
dc.date2002
dc.dateJUN
dc.date2014-11-17T00:50:54Z
dc.date2015-11-26T17:28:33Z
dc.date2014-11-17T00:50:54Z
dc.date2015-11-26T17:28:33Z
dc.date.accessioned2018-03-29T00:15:41Z
dc.date.available2018-03-29T00:15:41Z
dc.identifierAdvanced Functional Materials. Wiley-v C H Verlag Gmbh, v. 12, n. 41826, n. 455, n. 460, 2002.
dc.identifier1616-301X
dc.identifierWOS:000176637000009
dc.identifier10.1002/1616-3028(20020618)12:6/7<455
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/57081
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/57081
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/57081
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1285083
dc.descriptionWe report a detailed study of the growth and structure of thin films of copper hexadecafluorophthalocyanine (F16CuPc) on sapphire. These films show very good out of plane order and have X-ray rocking widths of around 0.02degrees. If prepared under suitable conditions of A-plane sapphire substrates, the molecules align without significant azimuthal dispersion. Growth on MgO (001) and oxidized silicon wafers resulted in a comparable out-of-plane structure, but showed no azimuthal order. We find that he azimuthal alignment on sapphire is induced by the step edges along the c-axis of the sapphire, which serve as templates for the growth. For growth at different substrate temperatures, we find a monotonic change of the molecular out-of-plane tilt angle, as obtained from Raman scattering, which is accompanied by a change of the out-of-plane lattice parameter.
dc.description12
dc.description41826
dc.description455
dc.description460
dc.languageen
dc.publisherWiley-v C H Verlag Gmbh
dc.publisherWeinheim
dc.publisherAlemanha
dc.relationAdvanced Functional Materials
dc.relationAdv. Funct. Mater.
dc.rightsfechado
dc.rightshttp://olabout.wiley.com/WileyCDA/Section/id-406071.html
dc.sourceWeb of Science
dc.subjectBeam Deposition
dc.subjectCopper-phthalocyanine
dc.subjectTransistors
dc.subjectEpitaxy
dc.titleControlled molecular alignment in phthalocyanine thin films on stepped sapphire surfaces
dc.typeArtículos de revistas


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