Measurement of refractive index of GaSb (1.8 to 2.56 mu m) using a prism

dc.creatorUribe, MM
dc.creatordeOliveira, CEM
dc.creatorClerice, JH
dc.creatorMiranda, RS
dc.creatorZakia, MB
dc.creatordeCarvalho, MMG
dc.creatorPatel, NB
dc.date1996
dc.dateFEB 1
dc.date2014-12-02T16:26:26Z
dc.date2015-11-26T17:28:05Z
dc.date2014-12-02T16:26:26Z
dc.date2015-11-26T17:28:05Z
dc.date.accessioned2018-03-29T00:15:15Z
dc.date.available2018-03-29T00:15:15Z
dc.identifierElectronics Letters. Iee-inst Elec Eng, v. 32, n. 3, n. 262, n. 264, 1996.
dc.identifier0013-5194
dc.identifierWOS:A1996UL76800084
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/53406
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/53406
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/53406
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1284969
dc.descriptionThe authors have measured the refractive index of GaSb for the transparent region from 1.8 to 2.56 mu m using refraction in a prism. The values obtained agree well. with those recently measured by the authors using ellipsometry. A good fit to the experimental data is obtained using the single oscillator model.
dc.description32
dc.description3
dc.description262
dc.description264
dc.languageen
dc.publisherIee-inst Elec Eng
dc.publisherHertford
dc.publisherInglaterra
dc.relationElectronics Letters
dc.relationElectron. Lett.
dc.rightsfechado
dc.sourceWeb of Science
dc.subjectrefractive index
dc.subjectrefractive index measurement
dc.subjectsemiconductor devices
dc.titleMeasurement of refractive index of GaSb (1.8 to 2.56 mu m) using a prism
dc.typeArtículos de revistas


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