Low-field magnetic relaxation study of a YBa2Cu3Ox, single crystal with H parallel to a-b planes

dc.creatorSalemSugui, S
dc.creatorAlvarenga, AD
dc.creatorSchilling, OF
dc.creatorSengupta, S
dc.date1997
dc.dateMAY
dc.date2014-12-16T11:37:46Z
dc.date2015-11-26T17:28:00Z
dc.date2014-12-16T11:37:46Z
dc.date2015-11-26T17:28:00Z
dc.date.accessioned2018-03-29T00:15:08Z
dc.date.available2018-03-29T00:15:08Z
dc.identifierSuperconductor Science & Technology. Iop Publishing Ltd, v. 10, n. 5, n. 284, n. 289, 1997.
dc.identifier0953-2048
dc.identifierWOS:A1997WY69100004
dc.identifier10.1088/0953-2048/10/5/004
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/52821
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/52821
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/52821
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1284942
dc.descriptionWe have measured magnetic relaxation M versus time in a twin-free single crystal of YBa2Cu3Ox for magnetic fields applied parallel to a-b planes. Magnetic relaxation is studied as a function of temperature (T) for a fixed field (H) and at a fixed T as a function of H. Long-time M versus t corves were mainly obtained for the partial field penetrating regime. All log M versus log t curves obtained in the partial-field regime present a kink at time t* separating two distinct regions. The kink gradually disappears as the applied field fully penetrates the sample. The value of t* is constant for ail field values, Similar but more accentuated differences are observed when the effective activation energy U extracted from the data is plotted against M(t). A linear behaviour of U with M is observed in the full field penetrated regime. We estimate that the Bean penetration depth increases exponentially with H in the partial-field regime. We also determined the range of temperatures for which surface barriers are important at the initial stage of relaxation.
dc.description10
dc.description5
dc.description284
dc.description289
dc.languageen
dc.publisherIop Publishing Ltd
dc.publisherBristol
dc.publisherInglaterra
dc.relationSuperconductor Science & Technology
dc.relationSupercond. Sci. Technol.
dc.rightsfechado
dc.rightshttp://iopscience.iop.org/page/copyright
dc.sourceWeb of Science
dc.subjectLivingston Surface-barrier
dc.subjectCreep Activation-energy
dc.subjectHigh-tc Superconductors
dc.subjectFlux-creep
dc.subjectIi Superconductors
dc.subjectCritical-state
dc.subjectPenetration
dc.subjectDependence
dc.subjectCrossover
dc.titleLow-field magnetic relaxation study of a YBa2Cu3Ox, single crystal with H parallel to a-b planes
dc.typeArtículos de revistas


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