Exciton center-of-mass dispersion in semiconductor quantum wells

dc.creatorTriques, ALC
dc.creatorBrum, JA
dc.date1997
dc.date42186
dc.date2014-12-16T11:37:18Z
dc.date2015-11-26T17:27:40Z
dc.date2014-12-16T11:37:18Z
dc.date2015-11-26T17:27:40Z
dc.date.accessioned2018-03-29T00:14:48Z
dc.date.available2018-03-29T00:14:48Z
dc.identifierPhysical Review B. American Physical Soc, v. 56, n. 4, n. 2094, n. 2102, 1997.
dc.identifier0163-1829
dc.identifierWOS:A1997XY36600061
dc.identifier10.1103/PhysRevB.56.2094
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/66258
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/66258
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/66258
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1284854
dc.descriptionWe discuss the results of the calculation of the exciton center-of-mass dispersion in a semiconductor quantum well. Strong nonparabolicity arises due to the coupling among the excitons related to the heavy and light holes. We consider the effects of the coupling in the exciton dynamics by calculating the exciton average mass and spin.
dc.description56
dc.description4
dc.description2094
dc.description2102
dc.languageen
dc.publisherAmerican Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectDiamond-like Semiconductors
dc.subjectElectric-field
dc.subjectDynamics
dc.subjectRelaxation
dc.subjectEnergy
dc.subjectMicrocavity
dc.subjectExcitation
dc.subjectBands
dc.titleExciton center-of-mass dispersion in semiconductor quantum wells
dc.typeArtículos de revistas


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