Laser reflectometry in situ monitoring structural and growth effects on the electron cyclotron resonance etching of In0.49Ga0.51P layers in Al-free laser structures

dc.creatorMestanza, SNM
dc.creatorFrateschi, NC
dc.date2001
dc.dateJAN-FEB
dc.date2014-11-16T22:12:41Z
dc.date2015-11-26T17:26:54Z
dc.date2014-11-16T22:12:41Z
dc.date2015-11-26T17:26:54Z
dc.date.accessioned2018-03-29T00:14:04Z
dc.date.available2018-03-29T00:14:04Z
dc.identifierJournal Of Vacuum Science & Technology B. Amer Inst Physics, v. 19, n. 1, n. 192, n. 196, 2001.
dc.identifier1071-1023
dc.identifierWOS:000167130200036
dc.identifier10.1116/1.1338555
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/61166
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/61166
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/61166
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1284663
dc.descriptionElectron cyclotron resonance (ECR) plasma etching of p- and n-In0.49Ga0.51P layers in Al-free laser structures is studied based on BCl3/N-2 gas mixture. Laser reflectometry is used for the in situ etching analysis. Strong etching rate discrepancies are found for the same material whether inserted in multilayer laser structures or in single calibration layers. Strong etching dependence with growth conditions and beryllium concentration is found. Great reduction in etching rate is observed near p(++)GaAs/p(++)In(0.49)Ga(0.51)P interfaces depending on growth conditions. These results are explained by a 200 Angstrom beryllium diffusion in the In0.49Ga0.51P material with subsequent formation of Be3P2 clusters in p-In0.49Ga0.51P during growth. (C) 2001 American Vacuum Society.
dc.description19
dc.description1
dc.description192
dc.description196
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationJournal Of Vacuum Science & Technology B
dc.relationJ. Vac. Sci. Technol. B
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectPlasma Chemistries
dc.subjectIngap
dc.titleLaser reflectometry in situ monitoring structural and growth effects on the electron cyclotron resonance etching of In0.49Ga0.51P layers in Al-free laser structures
dc.typeArtículos de revistas


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