Properties of GaAs/InGaAs Quantum-Size Structures Containing delta < Mn >-Doped Layers

dc.creatorVikhrova, OV
dc.creatorDanilov, YA
dc.creatorDrozdov, YN
dc.creatorZvonkov, BN
dc.creatorIikawa, F
dc.creatorBrasil, MJSP
dc.date2007
dc.dateFEB
dc.date2014-11-16T15:29:36Z
dc.date2015-11-26T17:25:32Z
dc.date2014-11-16T15:29:36Z
dc.date2015-11-26T17:25:32Z
dc.date.accessioned2018-03-29T00:12:45Z
dc.date.available2018-03-29T00:12:45Z
dc.identifierJournal Of Surface Investigation-x-ray Synchrotron And Neutron Techniques. Maik Nauka/interperiodica/springer, v. 1, n. 1, n. 64, n. 66, 2007.
dc.identifier1027-4510
dc.identifierWOS:000262676500012
dc.identifier10.1134/S1027451007010120
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/70545
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/70545
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/70545
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1284335
dc.descriptionProperties of structures containing an InGaAs quantum well (QW) or InAs quantum dots (QDs) as well as delta < C >- and delta < Mn >-doped layers are investigated. Most of these structures are fabricated by the MOCVD epitaxy method; delta < Mn >-doped layers are obtained by low-temperature laser deposition directly in the epitaxial reactor. The structures under study exhibit three conduction channels: the delta < Mn >-doped layer, delta < Mn >-doped layer, and QW or wetting layer in the case of QDs. The contribution of each channel into the total conduction depend on the measurement temperature. Photoluminescence of the structures as a function of thickness of delta < Mn >-doped layer is studied.
dc.description1
dc.description1
dc.description64
dc.description66
dc.descriptionCRDF [RUX0-001-NN-06/BP1M01]
dc.descriptionRussian Foundation for Basic Research [05-02-16624]
dc.descriptionCRDF [RUX0-001-NN-06/BP1M01]
dc.descriptionRussian Foundation for Basic Research [05-02-16624]
dc.languageen
dc.publisherMaik Nauka/interperiodica/springer
dc.publisherNew York
dc.publisherEUA
dc.relationJournal Of Surface Investigation-x-ray Synchrotron And Neutron Techniques
dc.relationJ. Surf. Ingestig.-X-Ray Synchro.
dc.rightsfechado
dc.rightshttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0
dc.sourceWeb of Science
dc.titleProperties of GaAs/InGaAs Quantum-Size Structures Containing delta < Mn >-Doped Layers
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución