We report low-temperature (77 K) electroreflectance and photoreflectance measurements of the E(1)-like optical transitions on a series of Ge/Si heterostructures (superlattices and quantum wells). For single and double quantum wells of any thickness, as well as for thick-layer superlattices (period similar to 100 Angstrom) the spectra can be understood in terms of quantum-confined bulk-Ge E(1) states. For thin (similar to 10 Angstrom) multiple quantum wells and superlattices, zone-folding effects dominate the spectra. Actual confinement of the electronic states is determined by measuring the Raman spectrum of each sample in and out of resonance with a given transition.48241802418030