Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN

dc.creatorFernandez, JRL
dc.creatorCerdeira, F
dc.creatorMeneses, EA
dc.creatorBrasil, MJSP
dc.creatorSoares, JANT
dc.creatorSantos, AM
dc.creatorNoriega, OC
dc.creatorLeite, JR
dc.creatorAs, DJ
dc.creatorKohler, U
dc.creatorPotthast, S
dc.creatorPacheco-Salazar, DG
dc.date2003
dc.dateOCT 15
dc.date2014-11-15T18:30:10Z
dc.date2015-11-26T17:21:20Z
dc.date2014-11-15T18:30:10Z
dc.date2015-11-26T17:21:20Z
dc.date.accessioned2018-03-29T00:08:50Z
dc.date.available2018-03-29T00:08:50Z
dc.identifierPhysical Review B. American Physical Soc, v. 68, n. 15, 2003.
dc.identifier1098-0121
dc.identifierWOS:000186422600054
dc.identifier10.1103/PhysRevB.68.155204
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/69516
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/69516
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/69516
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1283340
dc.descriptionWe performed optical and x-ray diffraction experiments on carbon doped cubic-GaN samples, deposited by plasma-assisted molecular beam epitaxy on (001) GaAs substrates, for various carbon concentrations. The samples were studied by Raman, photoluminescence, and photoluminescence excitation spectroscopies. These techniques give some insight into the mechanism of carbon incorporation in the material. Detailed analysis of these spectra leads to a picture in which carbon initially enters into N vacancies producing a marked improvement in the crystalline properties of the material. At higher concentrations it also begins to enter interstitially and form C complexes, with a consequent decrease of crystalline quality. This increase and later decrease of crystalline quality of our samples with the addition of C were also detectable in x-ray diffraction scans. A model calculation of the localized vibrations of the C atom in the GaN lattice allows for the interpretation of a feature in the Raman spectrum of some samples, which reinforces this view.
dc.description68
dc.description15
dc.languageen
dc.publisherAmerican Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectVibrational-modes
dc.subjectEpitaxial Layers
dc.subjectNative Defects
dc.subjectImpurity
dc.subjectAlxga1-xn
dc.subjectGaas
dc.titleOptical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN
dc.typeArtículos de revistas


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