Hole-electron electrical coupling in photorefractive materials

dc.creatorde Oliveira, I
dc.creatorMontenegro, R
dc.creatorFrejlich, J
dc.date2009
dc.dateDEC 14
dc.date2014-11-15T19:09:18Z
dc.date2015-11-26T17:21:19Z
dc.date2014-11-15T19:09:18Z
dc.date2015-11-26T17:21:19Z
dc.date.accessioned2018-03-29T00:08:49Z
dc.date.available2018-03-29T00:08:49Z
dc.identifierApplied Physics Letters. Amer Inst Physics, v. 95, n. 24, 2009.
dc.identifier0003-6951
dc.identifierWOS:000272954900019
dc.identifier10.1063/1.3272681
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/69591
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/69591
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/69591
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1283338
dc.descriptionWe describe an improved mathematical model for photorefractive materials exhibiting hole-electron competition where the constants accounting for electrical coupling between holes and electrons are independently adjusted for each one of them. Experimental results from photorefractive titanosillenite crystals with hole-electron competition, and particularly from a vanadium doped sample, are shown to be better described by this modified model than by the classical one already reported in the literature.
dc.description95
dc.description24
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationApplied Physics Letters
dc.relationAppl. Phys. Lett.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectbismuth compounds
dc.subjectholographic storage
dc.subjectphotorefractive materials
dc.subjectvanadium
dc.subjectCrystals
dc.subjectCompetition
dc.subjectTransport
dc.titleHole-electron electrical coupling in photorefractive materials
dc.typeArtículos de revistas


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