dc.creatorCastaldo, FC
dc.creatordos Reis, CA
dc.date2007
dc.dateAPR
dc.date2014-11-14T20:11:01Z
dc.date2015-11-26T17:16:37Z
dc.date2014-11-14T20:11:01Z
dc.date2015-11-26T17:16:37Z
dc.date.accessioned2018-03-29T00:04:48Z
dc.date.available2018-03-29T00:04:48Z
dc.identifierIeee Transactions On Electron Devices. Ieee-inst Electrical Electronics Engineers Inc, v. 54, n. 4, n. 885, n. 887, 2007.
dc.identifier0018-9383
dc.identifierWOS:000245327900035
dc.identifier10.1109/TED.2007.891849
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/77247
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/77247
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/77247
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1282329
dc.descriptionAn excess-noise current in CMOS Magnetic Sensitive Field Effect Transistor (MAGFET) split-drain transistors is investigated, and a new noise model is proposed. The model is based on the existence of the transversal noise current that stems from the inversion charge layer in the MOS transistor channel. This excess-noise current, along with the one predicted by the classical MOS transistor, produces the total split-drain noise current. Noise spectral density measurements were carried out to verify the proposed model for split-drain MAGFETs manufactured in 0.8 and 0.35-mu m CMOS, with an equal geometric aspect ratio of 10 mu m/10 mu m.
dc.description54
dc.description4
dc.description885
dc.description887
dc.languageen
dc.publisherIeee-inst Electrical Electronics Engineers Inc
dc.publisherPiscataway
dc.publisherEUA
dc.relationIeee Transactions On Electron Devices
dc.relationIEEE Trans. Electron Devices
dc.rightsfechado
dc.rightshttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dc.sourceWeb of Science
dc.subjectcorrelation
dc.subjectMAGFET
dc.subjectmagnetic sensors
dc.subjectnoise
dc.subjectsplit drain
dc.subjectSensitivity
dc.titleTransversal noise current: An excess noise in CMOS split-drain transistors
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución