Nonlinear hole transport and nonequilibrium thermodynamics in group III-nitrides under the influence of electric fields

dc.creatorRodrigues, CG
dc.creatorVasconcellos, AR
dc.creatorLuzzi, R
dc.date2007
dc.dateOCT 1
dc.date2014-11-14T19:54:00Z
dc.date2015-11-26T17:16:37Z
dc.date2014-11-14T19:54:00Z
dc.date2015-11-26T17:16:37Z
dc.date.accessioned2018-03-29T00:04:47Z
dc.date.available2018-03-29T00:04:47Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 102, n. 7, 2007.
dc.identifier0021-8979
dc.identifier1089-7550
dc.identifierWOS:000250147700072
dc.identifier10.1063/1.2785976
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/62016
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/62016
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/62016
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1282324
dc.descriptionA theoretical study on the nonlinear transport of holes and of the nonequilibrium thermodynamic characteristics of p-doped wurtzite gallium nitride (GaN), aluminium nitride (AlN), and indium nitride (InN), under the influence of moderate to high electric fields, is presented. It is based on a nonlinear quantum kinetic theory which provides a description of the dissipative phenomena developing in the system. The ultrafast time evolution of the hole drift velocity and of the quasitemperatures of holes and longitudinal optical phonons are obtained. The steady state is analyzed by determining the dependence on the electric field of the nonequilibrium thermodynamic state and of the non-Ohmic mobility. A velocity overshoot is evidenced. (C) 2007 American Institute of Physics.
dc.description102
dc.description7
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectMonte-carlo Calculation
dc.subjectWurtzite Gan
dc.subjectPhotoinjected Plasma
dc.subjectPolar Semiconductors
dc.subjectUltrafast Mobility
dc.subjectVelocity Overshoot
dc.subjectEffect Transistors
dc.subjectQuantum Transport
dc.subjectGallium Nitride
dc.subjectInn
dc.titleNonlinear hole transport and nonequilibrium thermodynamics in group III-nitrides under the influence of electric fields
dc.typeArtículos de revistas


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