Carrier dynamics in stacked InP/GaAs quantum dots

dc.creatorVeloso, AB
dc.creatorNakaema, MKK
dc.creatorde Godoy, MPF
dc.creatorLopes, JMJ
dc.creatorIikawa, F
dc.creatorBrasil, MJSP
dc.creatorBortoleto, JRR
dc.creatorCotta, MA
dc.creatorFichtner, PFP
dc.creatorMorschbacher, M
dc.creatorMadureira, JR
dc.date2007
dc.dateSEP 17
dc.date2014-11-14T15:26:29Z
dc.date2015-11-26T17:15:26Z
dc.date2014-11-14T15:26:29Z
dc.date2015-11-26T17:15:26Z
dc.date.accessioned2018-03-29T00:03:41Z
dc.date.available2018-03-29T00:03:41Z
dc.identifierApplied Physics Letters. Amer Inst Physics, v. 91, n. 12, 2007.
dc.identifier0003-6951
dc.identifierWOS:000249667200042
dc.identifier10.1063/1.2789705
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/78471
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/78471
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/78471
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1282046
dc.descriptionWe investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment.
dc.description91
dc.description12
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationApplied Physics Letters
dc.relationAppl. Phys. Lett.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectOptical-properties
dc.subjectGrowth
dc.subjectIslands
dc.titleCarrier dynamics in stacked InP/GaAs quantum dots
dc.typeArtículos de revistas


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