dc.creatorWang, JL
dc.creatorPancotti, A
dc.creatorJegou, P
dc.creatorNiu, G
dc.creatorGautier, B
dc.creatorMi, YY
dc.creatorTortech, L
dc.creatorYin, S
dc.creatorVilquin, B
dc.creatorBarrett, N
dc.date2011
dc.date42309
dc.date2014-07-30T17:34:48Z
dc.date2015-11-26T17:13:18Z
dc.date2014-07-30T17:34:48Z
dc.date2015-11-26T17:13:18Z
dc.date.accessioned2018-03-29T00:01:41Z
dc.date.available2018-03-29T00:01:41Z
dc.identifierPhysical Review B. Amer Physical Soc, v. 84, n. 20, 2011.
dc.identifier1098-0121
dc.identifierWOS:000297105800014
dc.identifier10.1103/PhysRevB.84.205426
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/66868
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/66868
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1281540
dc.descriptionUntil now, the quasiamorphous (QA) phase in BaTiO3 (BTO), SrTiO3 (STO), and BaZrO3 was achieved by pulling a thick film through a steep temperature gradient. Here, we show that a room-temperature deposited ultrathin film, subsequently annealed in O-2 can also produce a QA phase. The atomic, electronic, and ferroelectric (FE) structure of a QA, ultrathin BTO grown on STO were studied by x-ray diffraction (XRD), x-ray photoelectron diffraction (XPD), x-ray photoelectron spectroscopy (XPS), and piezoforce microscopy (PFM). The absence of long-range order is confirmed by in-and out-of-plane XRD as well as Ti 2p XPD. FE polarized domains with good retention have been successfully written into the QA film and exhibit a clear P-E hysteresis loop. Substrate clamping frustrates volume expansion during annealing leading to a QA film. Photoelectron spectroscopy confirms a similar overall electronic structure as for thicker films but with some significant differences. Simple charge-transfer arguments are not sufficient to explain the high-resolution core-level spectra. Ba, Ti, and O all show components associated with a surface region. We suggest that the observation of such a component in the Ti 2p spectrum is linked with the high dynamic charge tensor induced by the large off-center displacement of the Ti ion.
dc.description84
dc.description20
dc.descriptionFrench National Research Agency (ANR) [ANR-10-BLAN-1012]
dc.descriptionCEA
dc.descriptionFrench National Research Agency (ANR) [ANR-10-BLAN-1012]
dc.languageen
dc.publisherAmer Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.rightshttp://publish.aps.org/authors/transfer-of-copyright-agreement
dc.sourceWeb of Science
dc.subjectSoft-mode Spectroscopy
dc.subjectThin-films
dc.subjectElectronic-structure
dc.subjectPhase-transitions
dc.subjectAmorphous Batio3
dc.subjectSrtio3
dc.subjectSurface
dc.subjectPolarization
dc.subjectPerovskites
dc.subjectMicroscopy
dc.titleFerroelectricity in a quasiamorphous ultrathin BaTiO3 film
dc.typeArtículos de revistas


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