Surface and interface states in the Cu/V(110) structure

dc.creatorLegoas, SB
dc.creatorLaks, B
dc.date2002
dc.date42064
dc.date2014-11-14T01:43:36Z
dc.date2015-11-26T17:12:37Z
dc.date2014-11-14T01:43:36Z
dc.date2015-11-26T17:12:37Z
dc.date.accessioned2018-03-29T00:01:02Z
dc.date.available2018-03-29T00:01:02Z
dc.identifierPhysical Review B. American Physical Soc, v. 65, n. 11, 2002.
dc.identifier1098-0121
dc.identifierWOS:000174548400028
dc.identifier10.1103/PhysRevB.65.113403
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/74853
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/74853
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/74853
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1281375
dc.descriptionWe present ab initio calculations of the electronic structure of copper multilayers on V(110) surface. The calculations were based on density-functional theory and the real-space linear muffin-tin orbital method in the atomic-sphere approximation was used. Surface and interface states were investigated using the Green-function based transfer-matrix method. The results shown a variety of electronic states along the main symmetry lines of the two-dimensional Brillouin zone, and the presence of surface and interface states was verified. Also, the existence of a binding state about 1.8 eV below the Fermi level is in good agreement with recent photoemission experiments, such state can be interpreted as a quantum-well state.
dc.description65
dc.description11
dc.languageen
dc.publisherAmerican Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectUltrathin Vanadium Films
dc.subjectCu(001)
dc.subjectGrowth
dc.subjectCr
dc.subjectMagnetism
dc.subjectCu(100)
dc.titleSurface and interface states in the Cu/V(110) structure
dc.typeArtículos de revistas


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