dc.creatorAlves, MAR
dc.creatorTakeuti, DF
dc.creatorBraga, ES
dc.date2005
dc.dateJAN
dc.date2014-11-13T22:54:15Z
dc.date2015-11-26T17:11:47Z
dc.date2014-11-13T22:54:15Z
dc.date2015-11-26T17:11:47Z
dc.date.accessioned2018-03-29T00:00:16Z
dc.date.available2018-03-29T00:00:16Z
dc.identifierMicroelectronics Journal. Elsevier Sci Ltd, v. 36, n. 1, n. 51, n. 54, 2005.
dc.identifier0026-2692
dc.identifierWOS:000226566900007
dc.identifier10.1016/j.mejo.2004.10.004
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/66642
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/66642
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/66642
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1281182
dc.descriptionWe developed a process to obtain sharper silicon tips by employing anisotropic etching in a KOH solution followed by SF6 plasma etch. The tips were further sharpened using the established thermal oxidation technique to decrease the cone angle and, therefore, obtain smaller curvature radii. We have analyzed the impact of such changes in geometry on a figure of merit associated with the field emission characteristics. An increase in the figure of merit by a factor of three was found in relation to the tips before sharpening. (C) 2004 Elsevier Ltd. All rights reserved.
dc.description36
dc.description1
dc.description51
dc.description54
dc.languageen
dc.publisherElsevier Sci Ltd
dc.publisherOxford
dc.publisherInglaterra
dc.relationMicroelectronics Journal
dc.relationMicroelectron. J.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectsilicon tip arrays
dc.subjectwet etching
dc.subjectplasma etching
dc.subjectthermal oxidation
dc.subjectVacuum Microelectronics
dc.subjectDevices
dc.titleFabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching
dc.typeArtículos de revistas


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