Structural and optical characterization of strained free-standing InP nanowires

dc.creatorGonzalez, JC
dc.creatorda Silva, MIN
dc.creatorLozano, XS
dc.creatorZanchet, D
dc.creatorUgarte, D
dc.creatorRibeiro, E
dc.creatorGutierrez, HR
dc.creatorCotta, MA
dc.date2006
dc.dateJUL
dc.date2014-11-20T01:43:23Z
dc.date2015-11-26T17:11:37Z
dc.date2014-11-20T01:43:23Z
dc.date2015-11-26T17:11:37Z
dc.date.accessioned2018-03-29T00:00:06Z
dc.date.available2018-03-29T00:00:06Z
dc.identifierJournal Of Nanoscience And Nanotechnology. Amer Scientific Publishers, v. 6, n. 7, n. 2182, n. 2186, 2006.
dc.identifier1533-4880
dc.identifierWOS:000239542900046
dc.identifier10.1166/jnn.2006.353
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/79666
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/79666
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/79666
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1281141
dc.descriptionThe structural and optical properties of high-quality crystalline strained InP nanowires are reported in this article. The nanowires were produced by the vapor-liquid-solid growth method in a chemical-beam epitaxy reactor, using 20 nm gold nanoparticles as catalysts. Polarization-resolved photoluminescence experiments were carried out to study the optical properties of the InP nanowires. These experiments revealed a large blue shift of 74 meV of the first electron-to-heavy hole optical transition in the nanowires, which cannot be solely explained by quantum size effects. The blue shift is mainly attributed to the presence of biaxial compressive strain in the inward radial direction of the InP nanowires. High-resolution transmission electron microscopy Electron and selected area electron diffraction experiments show that the nanowires have high crystal quality and grow along a [001] axes. These experiments also confirmed the presence of 1.8% compressive radial strain and 2% tensile longitudinal strain in the nanowires. A simple theoretical model including both quantum confinement and strain effects consistently describes the actual energy position of the InP nanowires optical emission.
dc.description6
dc.description7
dc.description2182
dc.description2186
dc.languageen
dc.publisherAmer Scientific Publishers
dc.publisherStevenson Ranch
dc.publisherEUA
dc.relationJournal Of Nanoscience And Nanotechnology
dc.relationJ. Nanosci. Nanotechnol.
dc.rightsfechado
dc.sourceWeb of Science
dc.subjectInP nanowires
dc.subjectgrowth
dc.subjectphotoluminescence
dc.subjectTEM
dc.subjectIndium-phosphide Nanowires
dc.subjectPhase Epitaxial-growth
dc.subjectSemiconductors
dc.subjectPhotoluminescence
dc.titleStructural and optical characterization of strained free-standing InP nanowires
dc.typeArtículos de revistas


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