Growth study of Cu/Pd(111) by RHEED and XPS

dc.creatorde Siervo, A
dc.creatorPaniago, R
dc.creatorSoares, EA
dc.creatorPfannes, HD
dc.creatorLanders, R
dc.creatorKleiman, GG
dc.date2005
dc.date43831
dc.date2014-11-13T13:06:22Z
dc.date2015-11-26T17:09:32Z
dc.date2014-11-13T13:06:22Z
dc.date2015-11-26T17:09:32Z
dc.date.accessioned2018-03-28T23:58:11Z
dc.date.available2018-03-28T23:58:11Z
dc.identifierSurface Science. Elsevier Science Bv, v. 575, n. 41671, n. 217, n. 222, 2005.
dc.identifier0039-6028
dc.identifierWOS:000226822900026
dc.identifier10.1016/j.susc.2004.11.028
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/68521
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/68521
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/68521
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1280649
dc.descriptionAn X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED) investigation of the growth of Cu films on a Pd(1 11) single crystal at room temperature is presented. Dynamically taken XPS-data as function of the deposition time show a linear variation of ICu-3pIIPd-(3d) and a periodic change of its slope indicating a nearly layer-by-layer growth process. RHEED oscillations are seen for the 3-4 first layers, also suggesting a smooth growth mode. From the evolution of the RHEED-streaks separation the in-plane Cu-atom spacing is precisely determined. Up to a coverage of ca. 2-3 monolayers (ML) Cu grows pseudomorphously on Pd(1 11), despite the -7.1% strain imposed by the substrate lattice parameter. Non-pseudomorphous epitaxial growth is evidenced above ca. 3-4 ML by a discontinuous change in lateral lattice spacing observed by RHEED which indicates a relaxation to the Cu(1 11) "natural" surface lattice parameter. In addition it is concluded that surface alloying does not take place at least at room temperature (RT)-XPS spectra taken dynamically during annealing show that alloying occurs only above RT. (C) 2004 Elsevier B.V. All rights reserved.
dc.description575
dc.description41671
dc.description217
dc.description222
dc.languageen
dc.publisherElsevier Science Bv
dc.publisherAmsterdam
dc.publisherHolanda
dc.relationSurface Science
dc.relationSurf. Sci.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectcopper
dc.subjectpalladium
dc.subjectlow index single crystal surfaces
dc.subjectmolecular beam epitaxy
dc.subjectreflection high-energy electron diffraction
dc.subject(RHEED)
dc.subjectalloying
dc.subjectEnergy-electron-diffraction
dc.subjectThin Cu Films
dc.subjectEpitaxial-growth
dc.subjectOscillations
dc.subjectOverlayers
dc.subjectIntensity
dc.subjectCu(111)
dc.subjectPd(111)
dc.subjectPd(100)
dc.subjectStrain
dc.titleGrowth study of Cu/Pd(111) by RHEED and XPS
dc.typeArtículos de revistas


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