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Magnetoresistance in granular magnetic tunnel junctions with Fe nanoparticles embedded in ZnSe semiconducting epilayer
Registro en:
Journal Of Applied Physics. Amer Inst Physics, v. 103, n. 12, 2008.
0021-8979
WOS:000257284100066
10.1063/1.2938071
Autor
de Moraes, AR
Saul, CK
Mosca, DH
Varalda, J
Schio, P
de Oliveira, AJA
Canesqui, MA
Garcia, V
Demaille, D
Eddrief, M
Etgens, VH
George, JM
Institución
Resumen
We have investigated transport properties of iron (Fe) nanoparticles embedded in zinc selenide (ZnSe) semiconducting epilayers prepared by molecular beam epitaxy. Both positive and negative tunneling magnetoresistances (TMRs) were measured depending on the applied voltage biases and on the temperature. A slow reduction of the TMR magnitude with temperature was detected and it could be explained in terms of a crossover between direct/resonant tunneling and variable range hopping. The temperature behavior of the magnetoresistance is a clear signature of tunneling and hopping mechanisms mediated by the ZnSe barrier localized states. (C) 2008 American Institute of Physics. 103 12